Silicon Nitrides

CVD offers single tube and multi-tube thermal CVD and single wafer PECVD for Silicon Nitride deposition.

Silicon nitride is another commonly used dielectric material in Semiconductor and MEMS industries. It can be deposited by APCVD while LPCVD and PECVD are generally used.

In the LPCVD process, SiH2Cl2 (DCS) and NH3 are used as precursors to react at 700°C to 900°C. Changing the DCS to NH3 ratio can adjust the films stoichiometery and stress.

The PECVD process deposition can be done below 400 °C with SiH4 and NH3 precursors. Adding N2O to the deposition can form Silicon oxynitride with lower stress.

In general, LPCVD made Silicon Nitride has better film properties than PECVD made Silicon Nitride, while PECVD offers the low temperature deposition advantage. Choice of deposition method depends on the application requirement.

Please contact us for further details.