Polysilicon

CVD Equipment offers single tube and multi-tube thermal CVD and single wafer PECVD for undoped and doped polysilicon deposition.

Polysilicon can be made by LPCVD at a temperature from
570°C to 650°C or PECVD at 300°C to 400°C. SiH4 is the typical precursor for polysilicon in the IC industry while chloride silane is used for polysilicon in the solar industry.

Doped polysilicon can be made in situ by adding a dopant during the CVD deposition process. In situ doping produces better uniformity and deeper doping film.

Please contact us for further details.